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c7�=!Ŀ��~�{�����w��[o����n{�[ߚ�e��\y��y^Z��K�6X����j�I�,�xY�7����. /Length 1321 stream and a current will flow from the anode to the cathode. Other semiconductor components are made from more complicated arrangements; bipolar npn transistors, for example, are made by sandwiching a p layer in between two n layers, hence the name npn. Experiment 1 V-I characteristics of diode 1 V-I CHARACTERISTICS OF DIODE AIM: To obtain V-I characteristics of PN junction diode. The circuit connection for determining the V-I characteristics of a pn junction is shown in the figure below. The V-I characteristics of a diode can be ⦠1 An experiment on the physics of the PN junction. ii) Junction Voltage vs. Current. The V-I characteristics or voltage-current characteristics of the p-n junction diode is shown in the below figure. The junction voltage vs. current characteristic of an LED is similar to the V-I characteristics of diodes. Characteristics of a p-n junction diode. Applying a positive potential to the anode and a negative potential to the cathode of the pn junction diode establishes a forward bias condition on the diode. /Filter /FlateDecode (viii) Apparatus of the PN Junction Diode Experiment This was conducted as an introductory to Electronics laboratory and in line with some topics in lecture classes. The circuit diagram to plot the VI characteristics of a pn junction diode is shown. /MediaBox [0 0 595.276 841.89] A very small current will made at the junction due to the movement of minority charge carriers across the junction. When discussing about the diode circuits we should look through the graphical representation of the operation of the Zener diode. Question: EXPERIMENT NO 2 PN JUNCTION DIODE CHARACTERISTICS 2.1 AIM To Plot The V-I Characteristics Of A PN Junction Diode In Both Forward And Reverse Directions. � Select the diode ⦠>> x���y�]gu/��y8��=�%a�F+vb&.�A�rU�"�}����A�@CyP��JA�.�[! The horizontal line in the below figure represents the amount of voltage applied across the p-n junction diode whereas the vertical line represents the amount of current flows in the p-n junction diode. 2. It has two terminals called electrodes, one each from P-region and N-region. /Type /Page An isolated pn junction makes a semiconductor diode. This region deplete, of any type of free charge carrier is called as depletion region. When an N-type material (has more free electrons) is fused with the P-type material (has more number of holes) to create a semiconductor diode, it is known as PN junction diode. /DecodeParms << /Colors 3 /Columns 258 /BitsPerComponent 8 /Predictor 10 >> /Subtype /Image stream Diode Characteristics ⢠Objectives In this experiment, the I-V characteristics of a PN junction diode are studied, measured and computer-verified using PSPICE simulations. S#�F�s� �l �ط@X�H���_�R0��N�2��g�;2����2[3��I��"�pB����Cs��)*����cO-�v�N�MՎ���v�(!7��6Pd��pQYᳱ��h��'�{gJ�UY}
��Č�w���xK�.ò�okc`м 20 0 obj << /MediaBox [0 0 595.276 841.89] Due to two electrodes it ⦠PN junction V-I characteristics of p-n junction diode. /Parent 17 0 R >> /Height 318 The V-I characteristics or voltage-current characteristics of the p-n junction diode is shown in the below figure. /Width 258 [1] Understanding how a diode works from an âatomisticâ and a âcircuit elementsâ point-of-view is a necessary first step towards understanding more complex PN JUNCTION DIODE CHARACTERISTICS 2. /BitsPerComponent 8 ]m#-tᣡ���]�R:��|E�.�e�z�{�h�a_u�x�B�ʝXB�I0G������Z���O���Έ�n��Ye����k~�� ��̮=�ӫ��d�X������� /Filter /FlateDecode This was also to e xpand the studentâs knowledge and as well as his laboratory skills on the subject. As the applied potential is increased the depletion region width decrease and conduction of electron increase. ����ҧ /Parent 17 0 R Zero bias 2. >> endobj %PDF-1.4 We will then plot it to get the depen-dence. Reverse biasThe V-I characteristic of PN junction diode is given below:Related Article: 1. /Resources 2 0 R The V-I characteristics of a diode can be forward or reverse. (vii) Aim of the PN Junction Diode Experiment To draw the static current-voltage (I â V) characteristic of a junction diode in forward bias and hence to calculate its ac and dc forward resistances. This is the basic construction of the P-N junction diode. Experiment No: 1 P-N JUNCTION DIODE CHARACTERISTICS AIM: 1. Laboratory #1 - Diode Characteristics.pdf, National University of Computer and Emerging Sciences, Islamabad, Queensborough Community College, CUNY • ET 210, National University of Computer and Emerging Sciences, Islamabad • EE EL324, 5bf23052a73a9ccd5f3d5d82b4ba148a-original.pdf. Normally the voltage is taken along the x-axis and current along y-axis. Diode nomenclature and identification of polarity. The V-I characteristics of a diode can be forward or reverse. Characteristics of a p-n junction diode It generally shows the relation between bias voltage and current of a diode. 4 0 obj << �o����b?b�f���,2o$!Tg�*t�6�+�Y�s��PB�*]K5 A�aɃ�3��|]%
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�4����=�J��e ⢠In forward bias condition, current is constant until certain voltage is reached. To plot Volt-Ampere Characteristics of Silicon P-N Junction Diode. to draw v-i characteristics of a p-n junction diode in forward bias and calculate diode resistance 3x���RcsE�����O��0�B�^���ڕ��G
G^gt�9n��xLT�-n0����V��ES�[���Ⱥ0r��#�#�?h|��G�cr�O,L��RI�� �+�q�&���l�D¬�f���"2��S=M�@�gZ�ppu���u-2� Further recombination of, free carrier on both side is prevented because of the depletion voltage generated due to. A. Sconza, G. Torzo and G. Viola Dipartimento di Fisica Galileo Galilei Università di Padova Via Marzolo 8, 35131 Padova Italy Abstract: Simple apparatus, suitable for an undergraduate laboratory, allows precise measurements of the forward characteristics of Si and Ge âtransdiodesâ at different temperatures in the range 150 K to 300 K. LAB 1.pdf - Experiment 1 V-I characteristics of diode V-I CHARACTERISTICS OF DIODE AIM To obtain V-I characteristics of PN junction diode Introduction, 1 out of 1 people found this document helpful, To obtain V-I characteristics of PN junction diode, The semiconductor diode is formed by doping P-type impurity in one side and N-type of, impurity in another side of the semiconductor crystal forming a p-n junction as shown in, At the junction initially free charge carriers from both side recombine forming negatively, charged ions in P side of junction(an atom in P-side accept electron and becomes, negatively charged ion) and positively charged ion on n side(an atom in n-side accepts, hole i.e. Voltage-Current Characteristics of a PN Junction Diode To draw the voltage-current (V- I) characteristics of the PN junction diode and to determine its knee voltage and forward resistance. This diode either made by silicon or germanium which has atomic number Z=14 or Z=32 respectively. It is called cut in voltage. To find cut-in Voltage for Silicon P-N Junction diode. /ColorSpace /DeviceRGB endobj x�uVKo�F��W�H�z��ȥM
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��w��u$\5��a|�W���F}��o��?�o�W�.��f�����~�ӈ��~l>���r����2R��:���.RQ /Contents 4 0 R %���� This preview shows page 1 - 3 out of 9 pages. Definition ⢠P-type semiconductor is suitably joined to N-type semiconductor ,to conduct surface is called PN Junction. A PN junction diode is formed when a single crystal of semiconductor is doped with acceptors impurities (Pentavalent) on one side and donor impurities (Trivalent) on the other side. The graph shows the reverse V-I characteristics of the given p-n junction diode. Zener diode: It is the reverse biased havily doped silicon or germanium P-N junction diode which is operated in the breakdown region where current is limited by both external resistance and power dissipation of the diode. 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